Dr. Sabah M. Thahab
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Dr. Sabah M. Thahab

Lecturer
University of Kufa, Iraq

Highest Degree
Ph.D. in Physical Science Engineering from University of Kufa, Iraq

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Area of Interest:

Physical Science Engineering
100%
Nanotechnology
62%
Material Science
90%
Optics
75%
Heat Transfer
55%

Research Publications in Numbers

Books
0
Chapters
0
Articles
40
Abstracts
0

Selected Publications

  1. Thahab, S.M., 2019. Influence of surface morphology on the optical properties of antireflection coatingformed by porous silicon layer and ZnO nanocoulms/porous silicon. J. Eng. Applied Sci., 14: 1800-1804.
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  2. Thahab, S.M., 2018. Surface morphology effect on the optical properties of III-nitrides nanostructures for photo-sensing applications. Sensor Lett., 16: 76-79.
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  3. Abeer, K.A., S.N. Whid and S.M. Thahab, 2018. Effect of silver nanoparticles on the morphology and structural properties of PVP polymer nanof-fiber prepared by electrospining method. J. Pharm. Sci. Res., 10: 2183-2186.
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  4. Thahab, S.M., 2017. Synthesis and characterization of AG metal nanoparticles prepared in different solutions using Nd-YAG pulsed laser. Aust. J. Basic Applied Sci., 11: 16-20.
  5. Diwan, A.A., A.K.F. Hassan and S.M. Thahab, 2017. Experimental study of temperature effect and curing time on the shear strength of adhesive joints by polyvinyl pyrrolidone PVP K30. Kufa J. Eng., 8: 53-66.
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  6. Alsabari, I.K.A., S.M. Thahab, A. Al-Shammari, B.H. Saadoon and Z. Allebban, 2017. Nano-drug delivery system as a model for the treatment of breast cancer. Breast, 32: S28-S29.
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  7. Thahab, S.M., H.O.A. Adel and A.Z. Inass, 2016. Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique. Mater. Sci. Semicond. Process., 41: 436-440.
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  8. Thahab, S.M., A.H.O. Alkhayat and I.A. Zgair, 2016. Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique. J. Mater. Sci. Semicond. Process., 41: 436-440.
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  9. Alkhayatta, A.H.O., M.T. Sabah and A.Z. Inass, 2016. Structure, surface morphology and optical properties of post-annealed delafossite CuFeO2 thin films. Optik, 127: 3745-3749.
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  10. Alkhayatt, A.H.O., S.M. Thahab and I.A. Zgair, 2016. Structure, surface morphology and optical properties of post-annealed delafossite CuFeO2 thin films. Optik-Int. J. Light Electron Optics, 127: 3745-3749.
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  11. Abdulwahab, M.I., S.M. Thahab and A.H. Dhiaa, 2016. Experimental study of thermophysical properties of TiO2 nanofluid. Iraqi J. Chem. Pet. Eng., 17: 1-6.
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  12. Dhiaa, A.H., I.A. Majid, A. Wahab and S.M. Thahab, 2015. Study the convective heat transfer of TiO2/water nanofluid in heat exchanger system. Eng. Tech. J., 33: 1319-1323.
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  13. Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. The optical properties of CdxZn1-xSS thin films on glass substrate prepared by spray pyrolysis method. Optik, 125: 5112-5115.
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  14. Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. Influence of substrate type on the structural ,optical and electrical properties of CdxZn1-xS MSM thin films prepared by spray pyrolysis method. Mater. Sci. Semicond. Process., 26: 49-54.
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  15. Alahyarizadeh, G., Z. Hassan, S.M. Thahab, F.K. Yam and A.J. Ghazai, 2014. Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers. Optik-Int. J. Light Elect. Optics, 125: 341-344.
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  16. Alahyarizadeh, G., Z. Hassan, S.M. Thahab and F.K. Yam, 2014. Improvement of performance characteristics of deep violet InGaN DQW lasers using a strip DQW active region. Optik-Int. J. Light Elect. Optics, 125: 4911-4915.
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  17. Alahyarizadeh, G., H. Zainuriah, S.M. Thahab, M. Amirhoseiny and A.J. Ghazai, 2013. Effects of cavity length on optical characteristics of deep violet InGaN DQW lasers. Adv. Mater. Res., 626: 605-609.
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  18. Shekari, L., H.A. Hassan, S.M. Thahab, A.J. Ghazai and Z. Hassan, 2012. Growth and analysis of GaN nanowire on PZnO by different-gas flow. Applied Surf. Sci., 258: 6590-6594.
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  19. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2012. The effects of quantum wells number and the built-in polarization on the performance of quaternary AlInGaN UV laser diode. Optik-Int. J. Light Elect. Optics, 123: 856-859.
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  20. Alahyarizadeh, G.H., Z. Hassan, S.M. Thahab, M. Amirhoseiny and N. Naderi, 2012. Comparative study of the performance characteristics of green ingan sqw laser diodes with ternary algan and quaternary alingan electron blocking layer. Digest J. Nanomater. Biostruct., 7: 1869-1880.
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  21. Alahyarizadeh, G., Z. Hassan, A.J. Ghazai, H. Mahmodi and S.M. Thahab, 2012. Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer. J. Nanophotonics, Vol. 6. .
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  22. Shekari, L., H.A. Hassan, S.M. Thahab and Z. Hassan, 2011. Growth and characterization of high-quality GaN nanowires on PZnO and PGaN by thermal evaporation. J. Nanomater., Vol. 62. .
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  23. Hussein, A.S., Z. Hassan, S.M. Thahab, S.S. Ng, H.A. Hassan and C.W. Chin, 2011. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Applied Surface Sci., 257: 4159-4164.
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  24. Hussein, A.S., Z. Hassan, S.M. Thahab, A. Hassan, M.A. Abid and C.W. Chin, 2011. Structural, optical and electrical properties of undoped and Si-doped AlxGa1-xN thin films on Si (1 1 1) substrate grown by PA-MBE. Phys. B: Condensed Matter, 406: 1267-1271.
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  25. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer. Opt. Express, 19: 9245-9254.
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  26. Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. A study of the operating parameters and barrier thickness of Al0.08 In0.08 Ga0.84N/AlxInyGa1-x-y N double quantum well laser diodes. Sci. China Technol. Sci., 54: 47-51.
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  27. Jandow, N.N., K.A. Ibrahim, H.A. Hassan, S.M. Thahab and O.S. Hamad, 2010. The electrical properties of ZnO MSM photodetector with Pt contact electrodes on PPC plastic. J. Elect. Devices, 7: 225-229.
  28. Jandow, N.N., F.K. Yam, S.M. Thahab, K. Ibrahim and H.A. Hassan, 2010. The characteristics of ZnO deposited on PPC plastic substrate. Mater. Lett., 64: 2366-2368.
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  29. Jandow, N.N., F.K. Yam, S.M. Thahab, H.A. Hassan and K. Ibrahim, 2010. Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on Poly Propylene Carbonate (PPC) plastic substrate. Curr. Applied Phys., 10: 1452-1455.
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  30. Hussein, A.S., Z. Hassan, S.S. Ng, S.M. Thahab, C.W. Chin and H. Abu Hassan, 2010. PA-MBE growth and characterization of high Si-doped AlGaN on Si(111) substrate. Optoelect. Adv. Mater.-Rapid Commun., 4: 59-62.
  31. Hussein, A.S., Z. Hassan, H.A. Hassan and S.M. Thahab, 2010. Electrical properties of AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) with and without mg-doped carrier confinement layer. Int. J. Nanosci., 9: 263-267.
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  32. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. Performance of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers. World Acad. Sci. Eng. Technol., 55: 11-15.
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  33. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InGaN/GaN laser diode characterization and quantum well number effect. Chinese Opt. Lett., 7: 226-230.
  34. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InAlGaN quaternary multi-quantum wells UV laser diode performance and characterization. World Acad. Sci. Eng. Technol., 55: 352-355.
  35. Hussein, A.SH., S.M. Thahab, Z. Hassan, C.W. Chin, H. Abu Hassan and S.S. Ng, 2009. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy. J. Alloys Compounds, 487: 24-27.
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  36. Chuah, L.S., Z. Hassan, H. Abu Hassan, F.K. Yam, C.W. Chin and S.M. Thahab, 2008. Barrier height enhanced GaN Schottky diodes using a thin AlN surface layer. Int. J. Modern Phys. B, 22: 5167-5173.
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  37. Chuah, L.S., Z. Hassan, H. Abu Hassan, C.W. Chin and S.M. Thahab, 2008. Large area GaN Metal Semiconductor Metal (MSM) photodiode using a thin low temperature GaN cap layer. J. Nonlinear Opt. Phys. Mater., 17: 59-69.
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  38. Thahab, S.M., H.A. Hassan and Z. Hassan, 2007. Performance and optical characteristic of InGaN MQWs laser diodes. Opt. Express, 15: 2380-2390.
  39. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. The performance of ingan laser diodes consists of a separate confinement heterostructure with a multiple quantum well active region. J. Solid State Sci. Technol. Lett., 14: 130-138.
  40. Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. Influence of thick n-AlGaN contact layer on the performance of InGaN laser with diode modulation-doped strain-layer superlattices. J.Solid State Sci. Technol. Lett., Vol. 14. .