Dr. Qahtan  Nofan Abdullah
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Dr. Qahtan Nofan Abdullah

Lecturer
Tikrit University, Iraq


Highest Degree
Ph.D. in Physical Science Engineering from Universiti Sains Malaysia, Malaysia

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Biography

Qahtan N. Abdullah, is an Assistant Professor at Tikrit University college of Education for Pure Science, and lecturer in physics department in Iraqi universities. Dr. Q.N.Abdullah has over 10 scientific papers published in high quality journal. He is recognized expert in many areas of solid state physics including MOS devices, growth and characterization of nitride group, gallium oxide, indium oxide, and zinc oxide. Recent publications include a paper on Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. Dr. Q.N. Abdullah holds a BS, MSc in solid state physics from Al-Mustansiriyah University (Baghdad—Iraq) 1995 and 2001. Recently, he completed his Ph.D. in solid state physics in University Sains Malaysia / school of physics. He works many years in Institute of Nano-Optoelectronics Research and Technology (INOR) and developed hydrogen gas sensors based on gallium nitride nanowires and gallium oxide Nanobelts.

Area of Interest:

Physical Science Engineering
100%
Solid State Physics
62%
Atomic Force Microscopy
90%
X-Ray Diffraction
75%
Electron Microscopy
55%

Research Publications in Numbers

Books
0
Chapters
0
Articles
0
Abstracts
0

Selected Publications

  1. Qaeed, M.A., K. Ibrahim, K.M.A. Saron, M.S. Mukhlif and A. Ismail et al., 2015. New issue of GaN nanoparticles solar cell. Curr. Appl. Phys., 15: 499-503.
    CrossRef  |  Direct Link  |  
  2. Abdullah, Q.N., F.K. Yam, Z. Hassan and M. Bououdina, 2015. Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. J. Colloid Interface Sci., 460: 135-145.
    CrossRef  |  PubMed  |  Direct Link  |  
  3. Qaeed, M.A., K. Ibrahim, K.M.A. Saron, Q.N. Abdullah, N.G. Elfadill, S.H. Abud and K.M. Chahrour, 2014. The effective role of time in synthesising InN by chemical method at low temperature. J. Mater. Sci. Mater. Electron., 25: 1376-1380.
    CrossRef  |  Direct Link  |  
  4. Abdullah, Q.N., F.K. Yam, Z. Hassan and M. Bououdina, 2014. Hydrogen gas sensing performance of GaN nanowires-based sensor at low operating temperature. Sens. Actuators B: Chem., 204: 497-506.
    CrossRef  |  Direct Link  |  
  5. Abdullah, Q.N., F.K. Yam, Y. Yusof and H. Zainuriah, 2014. Fabrication Gallium Nitride (GaN) nanowires by thermal chemical vapor deposition (TCVD) technique. Adv. Mater. Res., 925: 450-454.
    CrossRef  |  Direct Link  |  
  6. Abdullah, Q.N., F.K. Yam, N.K. Hassan, M.A. Qeed, K. Al-Heuseen, M. Bououdina and Z. Hassan, 2014. One-dimensional GaN nanostructures prepared via chemical vapor deposition: Substrate induced size and dimensionality. Ceram. Int., 40: 9563-9569.
    CrossRef  |  Direct Link  |  
  7. Abdullah, Q.N., F.K. Yam, Z. Hassan and M. Bououdina, 2013. Growth and conversion of β-Ga2O3 nanobelts into GaN nanowires via catalyst-free chemical vapor deposition technique. Superlattices Microstruct., 54: 215-224.
    CrossRef  |  
  8. Abdullah, Q.N., F.K. Yam, J.J. Hassan, C.W. Chin, Z. Hassan and M. Bououdina, 2013. High performance room temperature GaN-nanowires hydrogen gas sensor fabricated by chemical vapor deposition (CVD) technique. Int. J. Hydrogen Energy, 38: 14085-14101.
    CrossRef  |  Direct Link  |  
  9. Abdullah, Q.N., F.K. Yam, H. Zainuriah and M. Bououdina, 2013. Free catalyst synthesis of gan nanostructures on Si-substrate via CVD. Mater. Sci. Forum, 756: 59-65.
    CrossRef  |  Direct Link  |